 | | |
| PartNumber | PMXB65ENEZ | PMXB65UPEZ |
| Description | MOSFET 31 V, N-channel Trench MOSFET | MOSFET 12V P-channel Trench MOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | DFN-1010D-3 | DFN-1010D-3 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Mounting Style | - | SMD/SMT |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 12 V |
| Id Continuous Drain Current | - | 3.2 A |
| Rds On Drain Source Resistance | - | 59 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Vgs Gate Source Voltage | - | 8 V |
| Qg Gate Charge | - | 12 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 1.07 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 P-Channel |
| Forward Transconductance Min | - | 9.4 S |
| Fall Time | - | 17 ns |
| Rise Time | - | 22 ns |
| Typical Turn Off Delay Time | - | 27 ns |
| Typical Turn On Delay Time | - | 6.2 ns |
| Unit Weight | - | 0.000045 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PMXB65ENEZ | MOSFET 31 V, N-channel Trench MOSFET | |
| PMXB65UPEZ | MOSFET 12V P-channel Trench MOSFET | ||
| PMXB65ENEZ | MOSFET N-CH 30V 3.2A 3DFN | ||
| PMXB65UPEZ | MOSFET P-CH 12V 3.2A DFN1010D-3G | ||
| PMXB65ENE | 全新原裝 | ||
| PMXB65ENE147 | - Bulk (Alt: PMXB65ENE147) | ||
| PMXB65UPE | 全新原裝 | ||
| PMXB65UPE147 | - Bulk (Alt: PMXB65UPE147) |