 |  | | |
| PartNumber | PMZ350UPEYL | PMZ350UPE | PMZ350XN |
| Description | MOSFET 20V P-channel Trench MOSFET | MOSFET, P-CH, -20V, -1.4A, SOT-883-3 | |
| Manufacturer | Nexperia | - | NXP |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-1006-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 940 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 360 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.02 mm | - | - |
| Product | MOSFET | - | - |
| Type | Trench MOSFET | - | - |
| Width | 0.62 mm | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 1.4 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.000028 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PMZ350UPEYL | MOSFET 20V P-channel Trench MOSFET | |
| PMZ350UPEYL | MOSFET P-CH 20V 1A | ||
| PMZ350XN,315 | RF Bipolar Transistors MOSFET TAPE7 MOSFET | ||
| PMZ350UPE | MOSFET, P-CH, -20V, -1.4A, SOT-883-3 | ||
| PMZ350XN | 全新原裝 | ||
| PMZ350XN315 | Now Nexperia PMZ350XN - Power Field-Effect Transistor, 1.87A I(D), 30V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3 |