 | | | |
| PartNumber | PSMN070-200B | PSMN070-200B/T3 | PSMN070-200B118 |
| Description | Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| Manufacturer | NXP | - | - |
| Product Category | FETs - Single | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| PSMN070-200B | 全新原裝 | ||
| PSMN070-200B/T3 | 全新原裝 | ||
| PSMN070-200B118 | Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| PSMN070-200B_15 | 全新原裝 | ||
| PSMN070-200P | - Bulk (Alt: PSMN070-200P) | ||
| PSMN070-200P/B | 全新原裝 | ||
| PSMN070-200P127 | Now Nexperia PSMN070-200P - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
Nexperia |
PSMN070-200B,118 | MOSFET TAPE13 PWR-MOS | |
| PSMN070-200P,127 | MOSFET RAIL PWR-MOS |