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PSMN1R6-30P

PSMN1R6-30PL vs PSMN1R6-30PL127 vs PSMN1R6-30PL,127

 
PartNumberPSMN1R6-30PLPSMN1R6-30PL127PSMN1R6-30PL,127
DescriptionMOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V, Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABDarlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET
製造商 型號 描述 RFQ
PSMN1R6-30PL MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V,
PSMN1R6-30PL127 Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Nexperia
Nexperia 		PSMN1R6-30PL,127 Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET
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