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| PartNumber | PSMN1R7-30YL,115 | PSMN1R7-30YL | PSMN1R7-30YL+115 |
| Description | MOSFET <=30V N CH TRENCHFET | Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | |
| Manufacturer | Nexperia | NXP | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 109 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.1 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 34 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 72 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 76 ns | - | - |
| Typical Turn On Delay Time | 46 ns | - | - |
| Part # Aliases | PSMN1R7-30YL T/R | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN1R7-30YL,115 | MOSFET <=30V N CH TRENCHFET | |
| PSMN1R7-30YL,115 | MOSFET N-CH 30V 100A LFPAK | ||
| PSMN1R7-30YL | 全新原裝 | ||
| PSMN1R7-30YL+115 | Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN1R7-30YL115 | Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK |