PSMN3R5-80P

PSMN3R5-80PS,127 vs PSMN3R5-80PS vs PSMN3R5-80PS/ES

 
PartNumberPSMN3R5-80PS,127PSMN3R5-80PSPSMN3R5-80PS/ES
DescriptionMOSFET N-Ch 80V 3.5 mOhms- Bulk (Alt: PSMN3R5-80PS)
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.5 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge135 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation338 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
製造商 型號 描述 RFQ
Nexperia
Nexperia
PSMN3R5-80PS,127 MOSFET N-Ch 80V 3.5 mOhms
PSMN3R5-80PS,127 RF Bipolar Transistors MOSFET N-Ch 80V 3.5 mOhms
PSMN3R5-80PS - Bulk (Alt: PSMN3R5-80PS)
PSMN3R5-80PS/ES 全新原裝
PSMN3R5-80PS127 Now Nexperia PSMN3R5-80PS - Power Field-Effect Transistor, 120A I(D), 80V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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