 |  | | |
| PartNumber | PSMN4R6-60PS,127 | PSMN4R6-60PS | PSMN4R6-60PS/BS |
| Description | MOSFET N-CH 60V STD LEVEL MOSFET | ||
| Manufacturer | Nexperia | NXP | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 8.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 70.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 211 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | N-Channel 60 V 4.6 mOhms Standard Level MOSFET in TO220 | - | - |
| Width | 4.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 26 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R6-60PS,127 | MOSFET N-CH 60V STD LEVEL MOSFET | |
| PSMN4R6-60PS,127 | IGBT Transistors MOSFET N-CH 60V STD LEVEL MOSFET | ||
| PSMN4R6-60PS | 全新原裝 | ||
| PSMN4R6-60PS/BS | 全新原裝 | ||
| PSMN4R6-60PS127 | Now Nexperia PSMN4R6-60PS - Power Field-Effect Transistor, 100A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |