 |  | | |
| PartNumber | PSMN4R8-100BSEJ | PSMN4R8-100BSE | PSMN4R8-100BSE118 |
| Description | MOSFET N-channel 100 V 4.8 mo FET | ||
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 196 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 405 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 69 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 65 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 127 ns | - | - |
| Typical Turn On Delay Time | 41 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R8-100BSEJ | MOSFET N-channel 100 V 4.8 mo FET | |
| PSMN4R8-100BSEJ | MOSFET N-CH 100V D2PAK | ||
| PSMN4R8-100BSE | 全新原裝 | ||
| PSMN4R8-100BSE118 | 全新原裝 | ||
| PSMN4R8-100BSEJ-CUT TAPE | 全新原裝 |