 | | | |
| PartNumber | PTFA220081M-V4 | PTFA220081M V4-T | PTFA220081M V4 |
| Description | FET RF LDMOS 8W SON10 | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | |
| Manufacturer | - | Infineon Technologies | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Series | - | PTFA220081 | - |
| Packaging | - | Reel | - |
| Part Aliases | - | PTFA220081MV4XUMA1 SP000707920 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PG-SON-10 | - |
| Technology | - | Si | - |
| Gain | - | 17 dB | - |
| Output Power | - | 8 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Operating Frequency | - | 0.7 GHz to 2.2 GHz | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 100 mA | - |
| Vds Drain Source Breakdown Voltage | - | 65 V | - |
| Transistor Polarity | - | N-Channel | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
N/A |
PTFA220081M-V4 | FET RF LDMOS 8W SON10 | |
Infineon Technologies |
PTFA220081MV4S500XUMA1 | IC AMP RF LDMOS 10-SON | |
| PTFA220081M V4-T | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | ||
| PTFA220081M V4 | 全新原裝 | ||
| PTFA220081MV4 | 全新原裝 | ||
| PTFA220081MV4XUMA1 | 全新原裝 |