 |  | |
| PartNumber | PZTA42H6327XTSA1 | PZTA42H6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTORS | SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 300V V(BR)CEO, 1-ELEMENT, NPN, SILICON |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-223-4 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | - |
| Collector Base Voltage VCBO | 300 V | - |
| Emitter Base Voltage VEBO | 6 V | - |
| Collector Emitter Saturation Voltage | 500 mV | - |
| Maximum DC Collector Current | 500 mA | - |
| Gain Bandwidth Product fT | 70 MHz | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Pd Power Dissipation | 1.5 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 42 H6327 PZTA SP000749568 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
PZTA42H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | |
| PZTA42H6327 | SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 300V V(BR)CEO, 1-ELEMENT, NPN, SILICON | ||
Infineon Technologies |
PZTA42H6327XTSA1 | TRANS NPN 300V 0.5A SOT223 |