QPD102 stock, QPD102, QPD1025L


PartNumber	QPD1022SR	QPD1025	QPD1020SR
Description	RF JFET Transistors DC-12GHz 10W 32V GaN	RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN	RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
Manufacturer	Qorvo	Qorvo	Qorvo
Product Category	RF JFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Type	HEMT	-	-
Technology	GaN SiC	GaN SiC	GaN SiC
Gain	24 dB	22.5 dB	18.4 dB
Transistor Polarity	N-Channel	Dual N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	32 V	65 V	50 V
Vgs Gate Source Breakdown Voltage	- 2.8 V	-	-
Id Continuous Drain Current	610 mA	28 A	100 mA
Output Power	10 W	1.862 kW	31 W
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C
Pd Power Dissipation	13.8 W	685 W	30 W
Mounting Style	SMD/SMT	-	SMD/SMT
Package / Case	QFN-16	NI-1230-4	DFN-8
Packaging	Reel	Tray	Reel
Operating Frequency	DC to 12 GHz	1 GHz to 1.1 GHz	2.7 GHz to 3.5 GHz
Series	QPD1022	QPD	-
Brand	Qorvo	Qorvo	Qorvo
Development Kit	QPD1022EVB01	-	-
Moisture Sensitive	Yes	Yes	Yes
Product Type	RF JFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	100	18	100
Subcategory	Transistors	MOSFETs	MOSFETs
Type	-	RF Power MOSFET	RF Small Signal MOSFET
Number of Channels	-	2 Channel	1 Channel
Vgs Gate Source Voltage	-	- 2.8 V	- 2.8 V

Search Part Number : "QPD102", Match & Start with "QPD102" - Total : 5

製造商	型號	描述
Qorvo	QPD1025L	RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
	QPD1022SR	RF JFET Transistors DC-12GHz 10W 32V GaN
	QPD1025	RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
	QPD1020SR	RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
	QPD1025L	RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

QPD102