PartNumber | RCD051N20TL | RCD050N20TL | RCD051N20 |
Description | MOSFET 10V Drive Nch Power MOSFET | MOSFET | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 5 A | 5 A | - |
Rds On Drain Source Resistance | 540 mOhms | 470 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.25 V | 3.25 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 8.3 nC | 9 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 29 W | 20 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Series | RCD051N20 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Forward Transconductance Min | 1.3 S | - | - |
Fall Time | 8 ns | 11 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 18 ns | 22 ns | - |
Typical Turn On Delay Time | 13 ns | 17 ns | - |
Part # Aliases | RCD051N20 | RCD050N20 | - |
Unit Weight | 0.011993 oz | 0.011993 oz | - |