 | | | |
| PartNumber | RF4E080BN | RF4E080BN TB | RF4E080BN TR |
| Description | |||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | RF4E080BN | - | - |
| Packaging | Reel | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | DFN2020-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 7 ns | - | - |
| Rise Time | 10 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Rds On Drain Source Resistance | 17.6 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Qg Gate Charge | 14.5 nC | - | - |
| Forward Transconductance Min | 5 S | - | - |