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| PartNumber | RGTH50TK65GC11 | RGTH50TK65DGC11 | RGTH50TK65 |
| Description | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-3PFM | TO-3PFM | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Continuous Collector Current at 25 C | 26 A | 26 A | - |
| Pd Power Dissipation | 59 W | 59 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | Tube | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Gate Emitter Leakage Current | 200 nA | 200 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | RGTH50TK65 | RGTH50TK65D | - |