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| PartNumber | RGW60TK65DGVC11 | RGW60TS65DGC11 | RGW60TK65GVC11 |
| Description | IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT | IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT | IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-3PFM | TO-247N-3 | TO-3PFM |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 1.5 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Continuous Collector Current at 25 C | 33 A | 60 A | 33 A |
| Pd Power Dissipation | 72 W | 178 W | 72 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 33 A | 60 A | 33 A |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Gate Emitter Leakage Current | 200 nA | 200 nA | 200 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Subcategory | IGBTs | IGBTs | IGBTs |