RN1103M

RN1103MFV(TPL3) vs RN1103MFV(TPL3)-ND vs RN1103MFV

 
PartNumberRN1103MFV(TPL3)RN1103MFV(TPL3)-NDRN1103MFV
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms
ManufacturerToshiba-TOSHIBA
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
DC Collector/Base Gain hfe Min70--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1103--
PackagingReel--
DC Current Gain hFE Max70--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
製造商 型號 描述 RFQ
Toshiba
Toshiba
RN1103MFV,L3F Bipolar Transistors - BJT Bias Resistor with Built-in Transistor
RN1103MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms
RN1103MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms
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