 |  | | |
| PartNumber | RN1104MFV(TL3,T) | RN1104MFV(TPL3) | RN1104MFV |
| Description | Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Series | RN1104MFV | RN1104MFV | - |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Configuration | - | Single | - |
| Transistor Polarity | - | NPN | - |
| Typical Input Resistor | - | 47 kOhms | - |
| Typical Resistor Ratio | - | 1 | - |
| Mounting Style | - | SMD/SMT | - |
| DC Collector/Base Gain hfe Min | - | 80 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | 100 mA | - |
| Peak DC Collector Current | - | 100 mA | - |
| Pd Power Dissipation | - | 150 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 80 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
RN1104MFV,L3F | Bipolar Transistors - Pre-Biased 150mW TRANSISTOR | |
| RN1104MFV(TL3,T) | Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC | ||
| RN1104MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | ||
| RN1104MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | ||
| RN1104MFV(TL3,T) | Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC | ||
| RN1104MFV,L3F | Bipolar Transistors - Pre-Biased 150mW TRANSISTOR | ||
| RN1104MFVL3FCT-ND | 全新原裝 | ||
| RN1104MFVL3FDKR-ND | 全新原裝 | ||
| RN1104MFVL3FTR-ND | 全新原裝 | ||
| RN1104MFV | 全新原裝 |