RN1105MFV

RN1105MFV,L3F vs RN1105MFV(TPL3)

 
PartNumberRN1105MFV,L3FRN1105MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHzBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
ManufacturerToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYN
ConfigurationSingleSingle
Transistor PolarityNPNNPN
Typical Input Resistor2.2 kOhms2.2 kOhms
Typical Resistor Ratio0.04680.047
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-723-3-
DC Collector/Base Gain hfe Min8080
Collector Emitter Voltage VCEO Max50 V50 V
Continuous Collector Current100 mA100 mA
Peak DC Collector Current100 mA100 mA
Pd Power Dissipation150 mW150 mW
SeriesRN1105RN1105
PackagingReelReel
Collector Base Voltage VCBO50 V-
Emitter Base Voltage VEBO5 V-
Height0.5 mm-
Length1.2 mm-
TypeNPN Epitaxial Silicon Transistor-
Width0.8 mm-
BrandToshibaToshiba
Maximum DC Collector Current100 mA-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity80008000
SubcategoryTransistorsTransistors
Maximum Operating Temperature-+ 150 C
DC Current Gain hFE Max-80
製造商 型號 描述 RFQ
Toshiba
Toshiba
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1105MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1105MFV,L3FCT-ND 全新原裝
RN1105MFV,L3FDKR-ND 全新原裝
RN1105MFV,L3FTR-ND 全新原裝
RN1105MFV,L3F(T 全新原裝
RN1105MFV,L3SOYF(T 全新原裝
RN1105MFVL3F Trans GP BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1105MFV,L3F)
RN1105MFVL3F(T 全新原裝
RN1105MFV 全新原裝
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