RN1107

RN1107(T5L,F,T) vs RN1107 vs RN1107 TE85L.F

 
PartNumberRN1107(T5L,F,T)RN1107RN1107 TE85L.F
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.213--
Mounting StyleSMD/SMT--
Package / CaseSOT-416-3--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN1107--
PackagingReel--
Emitter Base Voltage VEBO6 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
製造商 型號 描述 RFQ
Toshiba
Toshiba
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