 |  | | |
| PartNumber | RN2108MFV,L3F | RN2108MFV(TPL3) | RN2108MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 22 kOhms, 47 kOhms | 22 kOhms | - |
| Typical Resistor Ratio | 0.468 | 0.468 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2108MFV | - | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Brand | Toshiba | - | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Pd Power Dissipation | - | 150 mW | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| DC Collector Base Gain hfe Min | - | 80 | - |
| Peak DC Collector Current | - | 100 mA | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
RN2108MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN2108MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms | ||
| RN2108MFVL3F-ND | 全新原裝 | ||
| RN2108MFV | 全新原裝 |