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| PartNumber | RN2130MFV,L3F | RN2130MFV(TPL3) | RN2130MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 100 kOhms | 100 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | SOT-723 | - |
| DC Collector/Base Gain hfe Min | 100 | 100 | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2130 | RN2130 | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 10 V | - 10 V | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Peak DC Collector Current | - | 100 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Collector Base Voltage VCBO | - | - 50 V | - |
| DC Current Gain hFE Max | - | 100 | - |
| Height | - | 0.5 mm | - |
| Length | - | 1.2 mm | - |
| Operating Temperature Range | - | - 65 C to + 150 C | - |
| Type | - | PNP Epitaxial Silicon Transistor | - |
| Width | - | 0.8 mm | - |