PartNumber | SBCW30LT1G | SBCW66GLT1G | SBCW33LT1G |
Description | Bipolar Transistors - BJT SILICON TRANSISTOR PLAST | Bipolar Transistors - BJT SS GP XSTR NPN 45V | Bipolar Transistors - BJT SILICON TRANSISTOR PLAST |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Series | BCW30L | BCW66 | BCW33L |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | SOT-23-3 | - |
Transistor Polarity | - | NPN | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 45 V | - |
Collector Base Voltage VCBO | - | 75 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
Collector Emitter Saturation Voltage | - | 700 mV | - |
Maximum DC Collector Current | - | 800 mA | - |
Gain Bandwidth Product fT | - | 100 MHz | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
DC Current Gain hFE Max | - | 400 at 100 mA, 1 VDC | - |
DC Collector/Base Gain hfe Min | - | 160 at 100 mA, 1 VDC | - |
Pd Power Dissipation | - | 225 mW | - |
Unit Weight | - | 0.000282 oz | - |