SEM

SEMIX303GB12E4 vs SEMIX303GB12E4S vs SEMIX303GB12V

 
PartNumberSEMIX303GB12E4SEMIX303GB12E4SSEMIX303GB12V
DescriptionIGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
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  • SEM 492
製造商 型號 描述 RFQ
SEMIX303GB12E4 全新原裝
SEMIX303GB12E4S IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX303GB12V 全新原裝
SEMIX303GB12VS 全新原裝
SEMIX303GD12E4C 全新原裝
SEMIX303GD12T4C 全新原裝
SEMIX303GD12VC 全新原裝
SEMIX341D16S RECTIFIER MODULE, 1.6KV, 340A, SEMIX 13S, No. of Phases:Three Phase, Repetitive Reverse Voltage Vrrm Max:1.6kV, Forward Current If(AV):340A, Bridge Rectifier Case Style:Module, Forward Voltage VF
SEMIX352GAL128DS 全新原裝
SEMIX352GAR128DS 全新原裝
SEMIX352GB128D 全新原裝
SEMIX352GB128DS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
SEMIX353GB126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1 全新原裝
SEMIX353GB126V3 全新原裝
SEMIX353GB128DS 全新原裝
SEMIX353GB176HDS 全新原裝
SEMIX353GD126HDC SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS 全新原裝
SEMIX402GA066HDS 全新原裝
SEMIX402GAL066HDS SEMIX, Trench IGBT Module, 600V, 400A
SEMIX402GB066HDS IGBT MODULE, DUAL, 600V, 530A, Transistor Polarity:Dual NPN, DC Collector Current:530A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX403GB128D 全新原裝
SEMIX404GB12E4S SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX452GAR12 全新原裝
SEMIX452GB126HD 全新原裝
SEMIX453GB12E4 全新原裝
SEMIX453GB12E4P 全新原裝
SEMIX453GB12E4S IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
SEMIX453GB12T4S Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
SEMIX453GB12VS 全新原裝
SEMIX453GB176HDS IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage
SEMIX453GD12VC 全新原裝
SEMIX501D17FS SEMIX, Trench IGBT Module, 1700V, 800A
SEMIX503GB126HDS IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX503GB126V3 全新原裝
SEMIX553GB128DS 全新原裝
SEMIX603GAR066HDS SEMIX, Trench IGBT Module, 600V, 800A
SEMIX603GB066HDS 全新原裝
SEMIX603GB12E4P SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
SEMIX604GAL12E4S SEMIX, Trench IGBT Module, 1200V, 800A
SEMIX604GB126HDS SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX604GB12T4V6 全新原裝
SEMIX604GB12VS IGBT MODULE, DUAL, 1.2KV, 880A, Transistor Polarity:Dual NPN, DC Collector Current:880A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
SEMIX653GAL176HDS IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX402GB066HD 全新原裝
SEMIX553GB128D 全新原裝
SEMIX604GB12E4S 全新原裝
SEMIX604GB12T4S POWER IGBT TRANSISTOR
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