SH8M13

SH8M13GZETB vs SH8M13 vs SH8M13TB

 
PartNumberSH8M13GZETBSH8M13SH8M13TB
DescriptionMOSFET 4V Drive Nch+Pch Si MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6 A, 7 A--
Rds On Drain Source Resistance22 mOhms, 21.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V, 2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge5 nC, 18 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel, 1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min2.5 S, 6 S--
Fall Time7 ns, 65 ns--
Product TypeMOSFET--
Rise Time16 ns, 40 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns, 80 ns--
Typical Turn On Delay Time8 ns, 12 ns--
Part # AliasesSH8M13--
製造商 型號 描述 RFQ
SH8M13GZETB MOSFET 4V Drive Nch+Pch Si MOSFET
SH8M13 全新原裝
SH8M13GZETB MIDDLE POWER MOSFET SERIES (DUAL
SH8M13TB 全新原裝
SH8M13TB1 Trans MOSFET N/P-CH 30V ±6A/±7A 8-Pin SOP T/R (Alt: SH8M13TB1)
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