 | |  | |
| PartNumber | SI1016X-T1-GE3 | SI1016X-T1-E3 | SI1016X-T1 |
| Description | MOSFET N/P-Ch MOSFET 700/1200 [email protected] | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Id Continuous Drain Current | 400 mA, 600 mA | - | - |
| Rds On Drain Source Resistance | 750 mOhms, 1.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 750 pC, 1500 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 280 mW, 280 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI1 | SI1 | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 0.4 S, 1 S | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns, 35 ns | - | - |
| Typical Turn On Delay Time | 5 ns, 5 ns | - | - |
| Part # Aliases | SI1016X-GE3 | SI1016X-E3 | - |
| Unit Weight | 0.001129 oz | 0.001129 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1016X-T1-GE3 | MOSFET N/P-Ch MOSFET 700/1200 [email protected] | |
| SI1016X-T1-E3 | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 | ||
| SI1016X-T1 | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 | ||
Vishay |
SI1016X-T1-E3 | MOSFET N/P-CH 20V SOT563F | |
| SI1016X-T1-GE3 | MOSFET N/P-CH 20V SC89-6 |