 | |  | |
| PartNumber | SI1404BDH-T1-E3 | SI1404BDH-T1-GE3 | SI1404DH-T1 |
| Description | MOSFET N-CH 30V 1.9A SOT363 | MOSFET N-CH 30V 1.9A SOT363 | |
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI1404BDH-E3 | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SC-70-6 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 1.32 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 30 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 1.9 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 238 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 5 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay |
SI1404BDH-T1-E3 | MOSFET N-CH 30V 1.9A SOT363 | |
| SI1404BDH-T1-GE3 | MOSFET N-CH 30V 1.9A SOT363 | ||
| SI1404DH-T1 | 全新原裝 | ||
| SI1404DH-T1-E3 | 全新原裝 | ||
| SI1404DL | 全新原裝 | ||
| SI1404DH-T1-GE3 | 全新原裝 |