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| PartNumber | SI1499DH-T1-E3 | SI1499DH-T1-GE3 |
| Description | MOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V | MOSFET -8V -1.6A 2.78W |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-363-6 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 8 V | - |
| Id Continuous Drain Current | 1.6 A | - |
| Rds On Drain Source Resistance | 78 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Qg Gate Charge | 10.5 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.78 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1 mm | - |
| Length | 2.1 mm | - |
| Series | SI1 | SI1 |
| Transistor Type | 1 P-Channel | - |
| Width | 1.25 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 8 S | - |
| Fall Time | 60 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 40 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | - |
| Typical Turn On Delay Time | 9 ns | - |
| Part # Aliases | SI1499DH-E3 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1499DH-T1-E3 | MOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V | |
| SI1499DH-T1-GE3 | MOSFET -8V -1.6A 2.78W | ||
Vishay |
SI1499DH-T1-E3 | MOSFET P-CH 8V 1.6A SC70-6 | |
| SI1499DH-T1-GE3 | MOSFET P-CH 8V 1.6A SC-70-6 | ||
| SI1499DH-T1-E3-CUT TAPE | 全新原裝 |