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| PartNumber | SI2301CDS-T1-GE3 | SI2301CDS-T1-E3 | SI2301BDS-T1-GE3 |
| Description | MOSFET -20V Vds 8V Vgs SOT-23 | MOSFET -20V Vds 8V Vgs SOT-23 | MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 3.1 A | 3.1 A | 2.2 A |
| Rds On Drain Source Resistance | 112 mOhms | 112 mOhms | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV | 450 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V | 4.5 V |
| Qg Gate Charge | 10 nC | 10 nC | 4.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.6 W | 1.6 W | 0.7 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 9.5 S | 9.5 S | 6.5 S |
| Fall Time | 10 ns | 10 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 35 ns | 40 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 20 ns |
| Part # Aliases | SI2301CDS-GE3 | SI2301CDS-E3 | SI2301BDS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Height | - | - | 1.45 mm |
| Length | - | - | 2.9 mm |
| Width | - | - | 1.6 mm |
