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| PartNumber | SI2316BDS-T1-GE3 | SI2316BDS-T1-E3 |
| Description | MOSFET 30V 4.5A 1.66W 50mohm @ 10V | MOSFET 30V 4.5A 1.66W |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 4.5 A | - |
| Rds On Drain Source Resistance | 50 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 6.35 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.66 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.45 mm | - |
| Length | 2.9 mm | - |
| Series | SI2 | SI2 |
| Transistor Type | 1 N-Channel | - |
| Width | 1.6 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 6 S | - |
| Fall Time | 7 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | - |
| Typical Turn On Delay Time | 4.5 ns | - |
| Part # Aliases | SI2316BDS-GE3 | SI2316BDS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2316BDS-T1-GE3 | MOSFET 30V 4.5A 1.66W 50mohm @ 10V | |
| SI2316BDS-T1-E3 | MOSFET 30V 4.5A 1.66W | ||
Vishay |
SI2316BDS-T1-E3 | MOSFET N-CH 30V 4.5A SOT-23 | |
| SI2316BDS-T1-GE3 | MOSFET N-CH 30V 4.5A SOT23-3 | ||
| SI2316BDS-T1-E3-CUT TAPE | 全新原裝 | ||
| SI2316BDS-T1-GE3-CUT TAPE | 全新原裝 |