SI2323 stock, SI2323, SI2323DS-T1-E3


PartNumber	SI2323DDS-T1-GE3	SI2323CDS-T1-GE3	SI2323CDS-T1-GE3.
Description	MOSFET -20V Vds 8V Vgs SOT-23	MOSFET -20V Vds 8V Vgs SOT-23	MOSFET P-CHANNEL 20-V (D-S)
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	20 V	20 V	-
Id Continuous Drain Current	5.3 A	6 A	-
Rds On Drain Source Resistance	39 mOhms	39 mOhms	-
Vgs th Gate Source Threshold Voltage	400 mV	400 mV	-
Vgs Gate Source Voltage	4.5 V	4.5 V	-
Qg Gate Charge	24 nC	16 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.7 W	2.5 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	TrenchFET	TrenchFET	-
Packaging	Reel	Reel	Cut Tape
Height	1.45 mm	1.45 mm	1.45 mm
Length	2.9 mm	2.9 mm	2.9 mm
Series	SI2	SI2	-
Transistor Type	1 P-Channel	1 P-Channel	-
Width	1.6 mm	1.6 mm	1.6 mm
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Forward Transconductance Min	18 S	20 S	-
Fall Time	11 ns	12 ns	-
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	22 ns	23 ns	-
Factory Pack Quantity	3000	3000	-
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	52 ns	40 ns	-
Typical Turn On Delay Time	24 ns	15 ns	-
Unit Weight	0.000282 oz	0.000282 oz	0.050717 oz
Part # Aliases	-	SI2323CDS-GE3	-

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SI2323