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| PartNumber | SI2347DS-T1-GE3 | SI2347DS-T1-E3 | SI2347DS-T1-GE3-CUT TAPE |
| Description | MOSFET -30V Vds 20V Vgs SOT-23 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.7 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2347DS-T1-GE3 | MOSFET -30V Vds 20V Vgs SOT-23 | |
Vishay |
SI2347DS-T1-GE3 | IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III | |
| SI2347DS-T1-E3 | 全新原裝 | ||
| SI2347DS-T1-GE3-CUT TAPE | 全新原裝 |