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| PartNumber | SI3424BDV-T1-GE3 | SI3424CDV-T1-GE3 | SI3424BDV-T1-E3 |
| Description | MOSFET 30V 8.0A 2.98W 28mohm @ 10V | MOSFET 30V Vds 20V Vgs TSOP-6 | MOSFET RECOMMENDED ALT 78-SI3424CDV-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI3 | SI3 | SI3 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI3424BDV-GE3 | - | SI3424BDV-E3 |
| Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Rds On Drain Source Resistance | - | 26 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 8.3 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.6 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 17 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 3 ns | - |
| Height | - | - | 1.1 mm |
| Length | - | - | 3.05 mm |
| Width | - | - | 1.65 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3424BDV-T1-GE3 | MOSFET 30V 8.0A 2.98W 28mohm @ 10V | |
| SI3424CDV-T1-GE3 | MOSFET 30V Vds 20V Vgs TSOP-6 | ||
| SI3424BDV-T1-E3 | MOSFET RECOMMENDED ALT 78-SI3424CDV-T1-GE3 | ||
Vishay |
SI3424DV-T1-E3 | IGBT Transistors MOSFET 30V 6.7A 2W | |
| SI3424BDV-T1-E3 | MOSFET N-CH 30V 8A 6TSOP | ||
| SI3424BDV-T1-GE3 | MOSFET N-CH 30V 8A 6TSOP | ||
| SI3424CDV-T1-GE3 | MOSFET N-CH 30V 8A 6-TSOP | ||
| SI3424DV-T1-GE3 | MOSFET N-CH 30V 5A 6-TSOP | ||
| SI3424BDV | 全新原裝 | ||
| SI3424CDV-T1-E3 | 全新原裝 | ||
| SI3424DV | 全新原裝 | ||
| SI3424DV-T1 | MOSFET RECOMMENDED ALT 78-SI3424CDV-T1-GE3 |