 |  | | |
| PartNumber | SI3437DV-T1-E3 | SI3437DV | SI3437DV-T1-E3-CUT TAPE |
| Description | MOSFET -150V Vds 20V Vgs TSOP-6 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.2 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SI3 | TrenchFETR | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 4.5 S | - | - |
| Fall Time | 12 ns | 12 ns 14 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | 11 ns 29 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | 28 ns 23 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns 14 ns | - |
| Part # Aliases | SI3437DV-E3 | - | - |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| Part Aliases | - | SI3437DV-E3 | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-TSOP | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 3.2W | - |
| Drain to Source Voltage Vdss | - | 150V | - |
| Input Capacitance Ciss Vds | - | 510pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 1.4A (Tc) | - |
| Rds On Max Id Vgs | - | 750 mOhm @ 1.4A, 10V | - |
| Vgs th Max Id | - | 4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 19nC @ 10V | - |
| Pd Power Dissipation | - | 2 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 1.1 A | - |
| Vds Drain Source Breakdown Voltage | - | - 150 V | - |
| Rds On Drain Source Resistance | - | 750 mOhms | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3437DV-T1-E3 | MOSFET -150V Vds 20V Vgs TSOP-6 | |
| SI3437DV-T1-GE3 | MOSFET -150V Vds 20V Vgs TSOP-6 | ||
| SI3437DV | 全新原裝 | ||
| SI3437DVT1GE3 | Small Signal Field-Effect Transistor, 1.4A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI3437DV-T1-E3-CUT TAPE | 全新原裝 | ||
Vishay |
SI3437DV-T1-E3 | MOSFET P-CH 150V 1.4A 6-TSOP | |
| SI3437DV-T1-GE3 | MOSFET P-CH 150V 1.4A 6-TSOP |