 | | | |
| PartNumber | SI419 | SI4190 | SI4190ADY |
| Description | |||
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | IC Chips | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SI4190ADY-GE3 | - |
| Unit Weight | - | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | ThunderFET TrenchFET | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | 8-SO | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 6W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 1970pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 18.4A (Tc) | - |
| Rds On Max Id Vgs | - | 8.8 mOhm @ 15A, 10V | - |
| Vgs th Max Id | - | 2.8V @ 250μA | - |
| Gate Charge Qg Vgs | - | 67nC @ 10V | - |
| Pd Power Dissipation | - | 6 W | - |
| Vgs Gate Source Voltage | - | 2.8 V | - |
| Id Continuous Drain Current | - | 18.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.8 V | - |
| Rds On Drain Source Resistance | - | 8.8 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Qg Gate Charge | - | 20.7 nC | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4190ADY-T1-GE3 | MOSFET 100V Vds 20V Vgs SO-8 | |
| SI4196DY-T1-E3 | MOSFET | ||
| SI419 | 全新原裝 | ||
| SI4190 | 全新原裝 | ||
| SI4190ADY | 全新原裝 | ||
| SI4190ADY-T1-E3 | 全新原裝 | ||
| SI4190DY-T1-E3 | 全新原裝 | ||
Vishay |
SI4190ADY-T1-GE3 | MOSFET N-CH 100V 18.4A 8SO | |
| SI4190DY-T1-GE3 | MOSFET N-CH 100V 20A 8-SOIC | ||
| SI4196DY-T1-GE3 | MOSFET N-CH 20V 8A 8SOIC | ||
| SI4196DY-T1-E3 | MOSFET N-CH 20V 8A 8SOIC |