 |  |  | |
| PartNumber | SI4401DY-T1-E3 | SI4401DY-T1-GE3 | SI4401DY-T1 |
| Description | MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3 | IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V | MOSFET 40V 10.5A 3W |
| Manufacturer | Vishay | Vishay / Siliconix | VISHAY |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4401DY-E3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | SI4401DY-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.7 A | - |
| Vds Drain Source Breakdown Voltage | - | - 40 V | - |
| Rds On Drain Source Resistance | - | 15.5 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4401DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3 | |
Vishay |
SI4401DY-T1-GE3 | IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V | |
| SI4401DY-T1-E3 | MOSFET P-CH 40V 8.7A 8-SOIC | ||
| SI4401DY-T1 | MOSFET 40V 10.5A 3W |