 |  | | |
| PartNumber | SI4435DDY-T1-E3 | SI4435DDY-T1 | SI4435DDY-T1-E |
| Description | MOSFET -30V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Reel |
| Series | SI4 | - | SI4435DDY |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4435DDY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | 0.006596 oz |
| Part Aliases | - | - | SI4435DDY-E3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOIC-Narrow-8 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns 16 ns |
| Rise Time | - | - | 8 ns 35 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 8.1 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Rds On Drain Source Resistance | - | - | 24 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 45 ns 40 ns |
| Typical Turn On Delay Time | - | - | 10 ns 42 ns |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4435DDY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4435DDY-T1-E3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
| SI4435DDY-T1-E3-CUT TAPE | 全新原裝 | ||
| SI4435DDY-T1-GE3-CUT TAPE | 全新原裝 | ||
| SI4435DDY-T1 | 全新原裝 | ||
| SI4435DDY-T1-E | 全新原裝 | ||
| SI4435DDY-T1-E3 SOP8 | 全新原裝 | ||
| SI4435DDY-T1-E3. | P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO | ||
| SI4435DDY-TI-GE3 | 全新原裝 | ||
Vishay |
SI4435DDY-T1-E3 | MOSFET P-CH 30V 11.4A 8SOIC | |
| SI4435DDY-T1-GE3 | MOSFET P-CH 30V 11.4A 8-SOIC |