 | |  | |
| PartNumber | SI4447ADY-T1-GE3 | SI4447DY-T1-E3 | SI4447ADY-T1 |
| Description | MOSFET -40V Vds 20V Vgs SO-8 | MOSFET 40V 4.5A 2.0W 54mohm @ 10V | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 7.2 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 4.2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Series | SI4 | SI4 | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.017870 oz | 0.006596 oz | - |
| Part # Aliases | - | SI4447DY-E3 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4447ADY-T1-GE3 | MOSFET -40V Vds 20V Vgs SO-8 | |
| SI4447DY-T1-E3 | MOSFET 40V 4.5A 2.0W 54mohm @ 10V | ||
| SI4447DY-T1-GE3 | MOSFET 40V 4.5A 2.0W 54mohm @ 10V | ||
| SI4447DY-T1-E3-CUT TAPE | 全新原裝 | ||
| SI4447ADY-T1 | 全新原裝 | ||
Vishay |
SI4447ADY-T1-GE3 | MOSFET P-CH 40V 7.2A 8SOIC | |
| SI4447DY-T1-E3 | MOSFET P-CH 40V 3.3A 8-SOIC | ||
| SI4447DY-T1-GE3 | MOSFET P-CH 40V 3.3A 8-SOIC |