 | | | |
| PartNumber | SI4490DY-T1-GE3 | SI4490DY-T1-E3 | SI4491EDY-T1-GE3 |
| Description | MOSFET 200V Vds 20V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI4490DY-TR | MOSFET -30V Vds 25V Vgs SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Series | SI4 | SI4 | SI4 |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4490DY-GE3 | SI4490DY-E3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.002610 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 4 A | - |
| Rds On Drain Source Resistance | - | 80 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 34 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.1 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 19 S | - |
| Fall Time | - | 25 ns | - |
| Rise Time | - | 20 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4490DY-T1-GE3 | MOSFET 200V Vds 20V Vgs SO-8 | |
| SI4490DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4490DY-TR | ||
| SI4491EDY-T1-GE3 | MOSFET -30V Vds 25V Vgs SO-8 | ||
| SI4497DY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
| SI4493DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4477DY-GE3 | ||
| SI4493DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4477DY-GE3 | ||
Vishay |
SI4493DY-T1-E3 | RF Bipolar Transistors MOSFET 20V 14A 1.5W | |
| SI4493DY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 14A 3.0W 7.75mohm @ 4.5V | ||
| SI4490DY-T1-E3 | MOSFET N-CH 200V 2.85A 8-SOIC | ||
| SI4490DY-T1-GE3 | MOSFET N-CH 200V 2.85A 8-SOIC | ||
| SI4491EDY-T1-GE3 | MOSFET P-CH 30V 17.3A 8-SO | ||
| SI4497DY-T1-GE3 | MOSFET P-CH 30V 36A 8-SOIC | ||
| SI4490DY-T1-E3-CUT TAPE | 全新原裝 | ||
| SI4490DY | 全新原裝 | ||
| SI4490DY-E3 | MOSFET RECOMMENDED ALT 781-SI4490DY-T1-E3 | ||
| SI4490DY-TI-E3 | 全新原裝 | ||
| SI4490DYT1 | 全新原裝 | ||
| SI4491EDY | 全新原裝 | ||
| SI4491EDY-T1-E3 | 全新原裝 | ||
| SI4496DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4102DY-GE3 | ||
| SI4496DY-T1-GE3 | 全新原裝 | ||
| SI4497DY-T1-E3 | 全新原裝 |