 | | | |
| PartNumber | SI4800 | SI4800 DY | SI4800 , IDTAS4684AHG8 |
| Description | |||
| Manufacturer | PHI | - | - |
| Product Category | FETs - Single | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4800BDY-T1-E3 | MOSFET 30V 9A 2.5W | |
| SI4800BDY-T1-GE3 | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V | ||
| SI4800BDY-T1-E3-CUT TAPE | 全新原裝 | ||
| SI4800BDY-T1-GE3-CUT TAPE | 全新原裝 | ||
| SI4800 | 全新原裝 | ||
| SI4800 DY | 全新原裝 | ||
| SI4800 , IDTAS4684AHG8 | 全新原裝 | ||
| SI4800,118 | 全新原裝 | ||
| SI4800. | 全新原裝 | ||
| SI4800518 | 全新原裝 | ||
| SI4800B | 全新原裝 | ||
| SI4800BCY-T1-E3 | 全新原裝 | ||
| SI4800BD | 全新原裝 | ||
| SI4800BDY | MOSFET 30V 9A 2.5W | ||
| SI4800BDY-T | 全新原裝 | ||
| SI4800BDY-T1 | 全新原裝 | ||
| SI4800BDY-T1-E | 全新原裝 | ||
| SI4800BDY-T1-E3 SOP8 | 全新原裝 | ||
| SI4800BDY-T1-E3. | Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di | ||
| SI4800BDY-TI-E3 | 全新原裝 | ||
| SI4800DY | MOSFET RECOMMENDED ALT 781-SI4800BDY-E3 | ||
| SI4800DY-T1 | MOSFET Transistor, N-Channel, SO | ||
| SI4800DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4800BDY-E3 | ||
| SI4800DY-TI | 全新原裝 | ||
| SI4800DY/SI4800BDY | 全新原裝 | ||
| SI4800DY-T1-GE3 | 全新原裝 | ||
Vishay |
SI4800BDY-T1-E3 | MOSFET N-CH 30V 6.5A 8-SOIC | |
| SI4800BDY-T1-GE3 | MOSFET N-CH 30V 6.5A 8-SOIC | ||
NXP Semiconductors |
SI4800,518 | MOSFET N-CH 30V 9A SOT96-1 |