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| PartNumber | SI4936CDY-T1-E3 | SI4936CDY-T1 | SI4936CDY-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs SO-8 | MOSFET 2N-CH 30V 5.8A 8-SOIC | |
| Manufacturer | Vishay | VISHAY | Vishay Siliconix |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5.8 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2.3 W | - | - |
| Configuration | Dual | - | Dual Dual Drain |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | SI4 | - | TrenchFETR |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 11 ns | - | 13 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | 13 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | 16 ns |
| Typical Turn On Delay Time | 12 ns | - | 12 ns |
| Unit Weight | 0.002610 oz | - | 0.006596 oz |
| Part Aliases | - | - | SI4936CDY-GE3 |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2.3W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 325pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.8A |
| Rds On Max Id Vgs | - | - | 40 mOhm @ 5A, 10V |
| Vgs th Max Id | - | - | 3V @ 250μA |
| Gate Charge Qg Vgs | - | - | 9nC @ 10V |
| Pd Power Dissipation | - | - | 1.7 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 5 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 2.8 Ohms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4936CDY-T1-E3 | MOSFET 30V Vds 20V Vgs SO-8 | |
| SI4936CDY-T1 | 全新原裝 | ||
Vishay |
SI4936CDY-T1-E3 | MOSFET 2N-CH 30V 5.8A 8SO | |
| SI4936CDY-T1-GE3 | MOSFET 2N-CH 30V 5.8A 8-SOIC | ||
| SI4936CDY-T1-E3 GE3 | 全新原裝 | ||
| SI4936CDY-T1-G3 | 全新原裝 |