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| PartNumber | SI5443DC-T1-GE3 | SI5443DC-T1-E3 | SI5443DC-T1 |
| Description | MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W | MOSFET RECOMMENDED ALT 781-SI5441BDC-T1-E3 |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI5 | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI5443DC-GE3 | - | - |
| Unit Weight | 0.002998 oz | 0.002998 oz | - |
| Part Aliases | - | SI5443DC-E3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | ChipFET-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 30 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 3.6 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 65 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 50 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Channel Mode | - | Enhancement | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5443DC-T1-GE3 | MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V | |
Vishay |
SI5443DC-T1-E3 | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W | |
| SI5443DC-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V | ||
| SI5443DC-T1 | MOSFET RECOMMENDED ALT 781-SI5441BDC-T1-E3 |