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| PartNumber | SI5902BDC-T1-GE3 | SI5902BDC-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | ChipFET-8 | ChipFET-8 |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 4 A | - |
| Rds On Drain Source Resistance | 65 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.12 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI54 | SI54 |
| Transistor Type | 2 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5 S | - |
| Fall Time | 25 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 80 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Unit Weight | 0.002998 oz | 0.002998 oz |
| Height | - | 1.1 mm |
| Length | - | 3.05 mm |
| Width | - | 1.65 mm |
| Part # Aliases | - | SI5902BDC-E3 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5902BDC-T1-GE3 | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET | |
| SI5902BDC-T1-E3 | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET | ||
Vishay |
SI5902BDC-T1-E3 | IGBT Transistors MOSFET 30V 4.0A 3.12W | |
| SI5902BDC-T1-GE3 | MOSFET 2N-CH 30V 4A 1206-8 | ||
| SI5902BDCT1E3 | Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |