SI7224

SI7224DN-T1-GE3 vs SI7224DN-T1-E3 vs SI7224DN-T1-ES

 
PartNumberSI7224DN-T1-GE3SI7224DN-T1-E3SI7224DN-T1-ES
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8MOSFET 2N-CH 30V 6A PPAK 1212-8
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8--
TradenameTrenchFET--
PackagingReelTape & Reel (TR)-
Height1.04 mm--
Length3.3 mm--
SeriesSI7TrenchFETR-
Width3.3 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI7224DN-GE3--
Part Aliases-SI7224DN-E3-
Package Case-PowerPAKR 1212-8 Dual-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-PowerPAKR 1212-8 Dual-
Configuration-Dual-
FET Type-2 N-Channel (Dual)-
Power Max-17.8W, 23W-
Transistor Type-2 N-Channel-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-570pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-6A-
Rds On Max Id Vgs-35 mOhm @ 6.5A, 10V-
Vgs th Max Id-2.2V @ 250μA-
Gate Charge Qg Vgs-14.5nC @ 10V-
Pd Power Dissipation-2.5 W 2.6 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-12 ns 10 ns-
Rise Time-12 nS 10 nS-
Vgs Gate Source Voltage-16 V 20 V-
Id Continuous Drain Current-6 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-27 mOhms 22 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-12 ns 15 ns-
Typical Turn On Delay Time-12 ns 20 ns-
Channel Mode-Enhancement-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7224DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Vishay
Vishay
SI7224DN-T1-E3 MOSFET 2N-CH 30V 6A PPAK 1212-8
SI7224DN-T1-GE3 MOSFET 2N-CH 30V 6A PPAK 1212-8
SI7224DN-T1-ES 全新原裝
Top