 | | |
| PartNumber | SI7431DP-T1-E3 | SI7431DP-T1-GE3 |
| Description | MOSFET -200V Vds 20V Vgs PowerPAK SO-8 | MOSFET -200V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.04 mm | 1.04 mm |
| Length | 6.15 mm | 6.15 mm |
| Series | SI7 | SI7 |
| Width | 5.15 mm | 5.15 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI7431DP-E3 | SI7431DP-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 200 V |
| Id Continuous Drain Current | - | 3.6 A |
| Rds On Drain Source Resistance | - | 147 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 88 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 1.9 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 17 S |
| Fall Time | - | 66 ns |
| Rise Time | - | 49 ns |
| Typical Turn Off Delay Time | - | 110 ns |
| Typical Turn On Delay Time | - | 23 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7431DP-T1-E3 | MOSFET -200V Vds 20V Vgs PowerPAK SO-8 | |
| SI7431DP-T1-GE3 | MOSFET -200V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SI7431DP-T1-GE3 | MOSFET 200V 3.8A 5.4W 174mohm @ 10V | |
| SI7431DP-T1-E3 | MOSFET P-CH 200V 2.2A PPAK SO-8 | ||
| SI7431DP-T1-E3-CUT TAPE | 全新原裝 | ||
| SI7431DP | 全新原裝 | ||
| SI7431DP-T1-GE3. | 全新原裝 | ||
| SI7431DP-TI-E3 | 全新原裝 |