 |  | | |
| PartNumber | SI9435BDY-T1-E3 | SI9435BDY-E3 | SI9435BDY-T1 |
| Description | MOSFET 30V 5.7A 0.042Ohm | Transistor: P-MOSFET, unipolar, -30V, -4.6A, 2.5W, SO8 | MOSFET 30V 5.7A 2.5W |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4.1 A | - | - |
| Rds On Drain Source Resistance | 42 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI9 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SI9435BDY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI9435BDY-T1-E3 | MOSFET 30V 5.7A 0.042Ohm | |
| SI9435BDY-T1-GE3 | MOSFET 30V 5.7A 2.5W 42mohm @ 10V | ||
| SI9435BDY-T1-E3-CUT TAPE | 全新原裝 | ||
| SI9435BDY-E3 | Transistor: P-MOSFET, unipolar, -30V, -4.6A, 2.5W, SO8 | ||
| SI9435BDY-T1 | MOSFET 30V 5.7A 2.5W | ||
| SI9435BDY-T1-E3 , IMP811 | 全新原裝 | ||
| SI9435BDY-T1-E3 GE3 | 全新原裝 | ||
| SI9435BDY-T1-E3(9435B) | 全新原裝 | ||
| SI9435BDY-T1-E3. | MOSFET 30V 5.7A 0.042Ohm | ||
| SI9435BDY-TI-E3 | 全新原裝 | ||
| SI9435BDYT1E3 | Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI9435BDY | 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
Vishay |
SI9435BDY-T1-E3 | MOSFET P-CH 30V 4.1A 8-SOIC | |
| SI9435BDY-T1-GE3 | MOSFET P-CH 30V 4.1A 8-SOIC |