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| PartNumber | SIA110DJ-T1-GE3 | SIA106DJ-T1-GE3 | SIA108DJ-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK SC-70 | MOSFET 60V Vds 20V Vgs PowerPAK SC-70 | MOSFET Nch 80V Vds 20V Vgs PowerPAK SC-70 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SC-70-6 | SC-70-6 | SC-70-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 80 V |
| Id Continuous Drain Current | 12 A | 10 A | 12 A |
| Rds On Drain Source Resistance | 55 mOhms | 18.5 mOhms | 38 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 13.5 nC | 13 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 19 W | 19 W | 19 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | Reel |
| Series | SIA | SIA | SIA |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | 25 S | 28 S |
| Fall Time | 5 ns | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 5 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 14 ns | 14 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Transistor Type | - | - | 1 N-Channel |
