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| PartNumber | SIA906EDJ-T1-GE3 | SIA906EDJ | SIA906EDJ-T1-E3 |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SC70-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 46 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 0.95 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 7.8 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.75 mm | - | - |
| Length | 2.05 mm | - | - |
| Series | SIA | TrenchFETR | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 2.05 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | 18 ns 15 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns 5 ns | - |
| Part # Aliases | SIA906EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | 0.000988 oz | - |
| Part Aliases | - | SIA906EDJ-GE3 | - |
| Package Case | - | PowerPAKR SC-70-6 Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SC-70-6 Dual | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 7.8W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 350pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4.5A | - |
| Rds On Max Id Vgs | - | 46 mOhm @ 3.9A, 4.5V | - |
| Vgs th Max Id | - | 1.4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 12nC @ 10V | - |
| Pd Power Dissipation | - | 1.9 W | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 46 mOhms | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA906EDJ-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SC-70 | |
Vishay |
SIA906EDJ-T1-GE3 | IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V | |
| SIA906EDJ | 全新原裝 | ||
| SIA906EDJ-T1-E3 | 全新原裝 | ||
| SIA906EDJ-T4-GE3 | 全新原裝 |