SIHA12

SIHA12N50E-E3 vs SIHA120N60E-GE3 vs SIHA12N60E-E3

 
PartNumberSIHA12N50E-E3SIHA120N60E-GE3SIHA12N60E-E3
DescriptionMOSFET 500V Vds 30V Vgs TO-220 FULLPAKMOSFET 650V Vds; 30V Vgs TO-220MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage550 V600 V650 V
Id Continuous Drain Current10.5 A25 A12 A
Rds On Drain Source Resistance380 mOhms120 mOhms380 mOhms
Vgs th Gate Source Threshold Voltage4 V3 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge25 nC45 nC29 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation32 W34 W33 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Height15.49 mm--
Length10.41 mm--
SeriesEEE
Width4.7 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time12 ns33 ns19 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns65 ns19 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time29 ns31 ns35 ns
Typical Turn On Delay Time13 ns19 ns14 ns
Unit Weight0.211644 oz-0.211644 oz
Transistor Type-1 N-Channel-
Forward Transconductance Min-6 S-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHA12N50E-E3 MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
SIHA120N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-220
SIHA12N60E-E3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Vishay
Vishay
SIHA12N50E-E3 IGBT Transistors MOSFET N-Channel 500V
SIHA12N60E-E3 MOSFET N-CH 600V 12A TO-220
SIHA120N60E-GE3 E Series Power MOSFET Thin-Lead TO-220 FULLPAK, 120 m @ 10V
SIHA12N60E 全新原裝
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