 |  |  | |
| PartNumber | SIHA180N60E-GE3 | SIHA18N60E-E3 | SIHA18N60E |
| Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 19 A | 18 A | - |
| Rds On Drain Source Resistance | 180 mOhms | 176 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 33 nC | 46 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 33 W | 34 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Series | E | E | - |
| Transistor Type | 1 N-Channel E-Series Power MOSFET | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 5.3 S | - | - |
| Fall Time | 23 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 49 ns | 24 ns | - |
| Factory Pack Quantity | 1 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 51 ns | - |
| Typical Turn On Delay Time | 14 ns | 17 ns | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.068784 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHA180N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | |
| SIHA18N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHA18N60E | 全新原裝 | ||
Vishay |
SIHA180N60E-GE3 | E Series Power MOSFET Thin-Lead TO-220 FULLPAK, 180 m @ 10V | |
| SIHA18N60E-E3 | MOSFET N-CHANNEL 600V 18A TO220 |