 | |  | |
| PartNumber | SIHD5N50D-GE3 | SIHD5N50D-E3 | SIHD5N50D |
| Description | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 5.3 A | 5.3 A | - |
| Rds On Drain Source Resistance | 1.5 Ohms | 1.5 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 10 nC | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 104 W | 104 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | D | D | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14 ns | 14 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 0.050717 oz | 0.011993 oz | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Width | - | 6.22 mm | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD5N50D-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | |
| SIHD5N50D-E3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD5N50D | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
Vishay |
SIHD5N50D-E3 | MOSFET N-CH 500V 5.3A TO252 DPK | |
| SIHD5N50D-GE3 | MOSFET N-CH 500V 5.3A TO252 DPK |